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Room temperature continuous wave lasing characteristics of GaInAsP/InP microdisk injection laser

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3 Author(s)
M. Fujita ; Div. of Electr. & Comput. Eng., Yokohama Nat. Univ. ; K. Inoshita ; T. Baba

The authors have achieved continuous-wave lasing in a GaInAsP/InP microdisk injection laser at room temperature for the first time. A record low threshold current of 150 μA was demonstrated at a wavelength of 1.63 μm with a high cavity Q of 3300

Published in:

Electronics Letters  (Volume:34 ,  Issue: 3 )