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Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation

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7 Author(s)
Takahashi, M. ; ATR Adaptive Commun. Res. Labs., Kyoto, Japan ; Vaccaro, P. ; Egami, N. ; Mizutani, A.
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An experimental investigation of dynamic lasing characteristics in oxide-confinement InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates is presented. A stable single polarisation mode was exhibited along the [2¯33] crystallographic direction under continuous wave (CW) operation and under high-speed direct modulation with a data rate of 1 Gbit/s

Published in:

Electronics Letters  (Volume:34 ,  Issue: 3 )

Date of Publication:

5 Feb 1998

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