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The theory of p-n junctions in semiconductors and p-n junction transistors

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1 Author(s)

In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτp)1/2 where τp is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.

Published in:

Bell System Technical Journal, The  (Volume:28 ,  Issue: 3 )

Date of Publication:

July 1949

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