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High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector

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5 Author(s)
Yi-Jen Chiu ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Fleischer, S.B. ; Bowers, J.E. ; Gossard, A.C.
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Summary form only given. We successfully fabricated a p-i-n traveling-wave photodetector (TWPD) with low-temperature-grown GaAs (LTG-GaAs) as the absorption layer. The results show the device performance can be improved by taking advantage of both the short carrier lifetime in the LTG-GaAs and the TWPD structure. Furthermore, we investigated saturation effects in the LTG-GaAs TWPD detector under high optical excitation using electro-optic sampling. We believe that defect saturation and field screening effects are the main factors determining the saturation energy for higher optical pulse energies.

Published in:

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Date of Conference:

3-8 May 1998