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Summary form only given. We successfully fabricated a p-i-n traveling-wave photodetector (TWPD) with low-temperature-grown GaAs (LTG-GaAs) as the absorption layer. The results show the device performance can be improved by taking advantage of both the short carrier lifetime in the LTG-GaAs and the TWPD structure. Furthermore, we investigated saturation effects in the LTG-GaAs TWPD detector under high optical excitation using electro-optic sampling. We believe that defect saturation and field screening effects are the main factors determining the saturation energy for higher optical pulse energies.