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Browse Conference Publications > Lasers and Electro-Optics, 19 ... Help

High-temperature (210/spl deg/C) operation of long-wavelength strained quantum well lasers on InGaAs ternary substrates

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8 Author(s)
Otsubo, K. ; RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan ; Shoji, H. ; Kusunoki, T. ; Suzuki, T.
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Summary form only given. Lasing at 210 C has been achieved in long-wavelength strained InAlGaAs quantum well lasers on InGaAs ternary substrates. This lasing temperature is the highest for long wavelength semiconductor lasers.

Published in:
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Date of Conference: 3-8 May 1998

Meeting Date :
03 May 1998-08 May 1998
Print ISBN:
1-55752-339-0
INSPEC Accession Number:
6102928
Conference Location :
San Francisco, CA, USA
Digital Object Identifier :
10.1109/CLEO.1998.676182
Product Type:
Conference Publications

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