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Summary form only given. The use of an InGaAsP quantum well (QW) active region offers the intriguing possibility of realizing reliable high-power operation at short wavelengths (730 nm). We employ high bandgap cladding layers and confining layers to suppress carrier leakage along with a 1.5% compressively strained InGaAsP QW. The structure was grown on  substrates misoriented 10 toward (111) A by low-pressure metal-organic chemical-vapor deposition (LPMOCVD).