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Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

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6 Author(s)
Jong, F.C. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Huang, T.Y. ; Chao, T.S. ; Lin, H.C.
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The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N 2O-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed

Published in:

Electronics Letters  (Volume:34 ,  Issue: 4 )