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Extremely low noise InGaP/GaAs HBT oscillator at C-band

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7 Author(s)
Perez, S. ; Dept. de Fisica Aplicada, Univ. de Salamanca, Spain ; Floriot, D. ; Maurin, P ; Bouquet, P.
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A state-of-the-art very low phase noise integrated hybrid dielectric resonator oscillator (DRO) working at 6.7 GHz has been designed and fabricated using a self-aligned InGaP/GaAs HBT as the active device. Very low PM noise has been experimentally obtained: -124 dBc/Hz at 10 kHz off-carrier. This result is compared with other silicon oscillator circuits fabricated with a similar topology. At least a 12 dB improvement for the HBT technology is observed

Published in:

Electronics Letters  (Volume:34 ,  Issue: 8 )

Date of Publication:

16 Apr 1998

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