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Simulation Study of the Single-Event Effects Sensitivity in Nanoscale CMOS for Body-Biasing Circuits

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4 Author(s)
Junrui Qin ; Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China ; Shuming Chen ; Changguo Guo ; Yankang Du

The sensitivity of single-event effects (SEEs) in nanoscale CMOS for body-biasing circuits has been investigated. For PMOS hits, it is found that forward-biasing the body for high-speed applications can suppress the SET pulses greatly. Reverse-biasing the body for low-power applications, however, does not reduce the SEE vulnerability compared with operation when the body grounded. The body-biasing voltage has no impact on SEE sensitivity for NMOS hits.

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Device and Materials Reliability, IEEE Transactions on  (Volume:14 ,  Issue: 2 )