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Low RC-Constant Perforated-Channel HFET

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6 Author(s)
Grigory S. Simin ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; Mirwazul Islam ; Mikhail Gaevski ; Jianyu Deng
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The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing. These results are especially important for new generations of power switching transistors.

Published in:

IEEE Electron Device Letters  (Volume:35 ,  Issue: 4 )