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Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 μm

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5 Author(s)
O. Baklenov ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; H. Nie ; K. A. Anselm ; J. C. Campbell
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A resonant-cavity pin photodiode with two quantum dot absorbing regions is described. Each absorbing region consists of a stack of five self-assembled, quantum-dot layers, that are formed by the deposition of six monolayers of In0.5Ga0.5As with GaAs spacer layers. To optimise the responsivity, the quantum dot stacks are placed at the antinodes of the cavity. The peak efficiency is 65% at 1.06 μm with a spectral bandwidth of 1.3 nm

Published in:

Electronics Letters  (Volume:34 ,  Issue: 7 )