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Comparison of on-resistance of a power MOSFET by varying temperature

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4 Author(s)
Lu, W. ; Dept. of Mech., Mater. & Aerosp. Eng., Central Florida Univ., Orlando, FL, USA ; Mauriello, R.J. ; Sundaram, K.B. ; Chow, L.C.

The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling

Published in:

Southeastcon '98. Proceedings. IEEE

Date of Conference:

24-26 Apr 1998