By Topic

A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Ansari, A. ; Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA ; Rais-Zadeh, M.

A multigigahertz AlGaN/GaN resonant body transistor (RBT) is reported, wherein the mechanical resonance and electrical signal modulation are achieved simultaneously. A 175-Å-thick AlGaN layer is used as the piezoelectric transduction layer, and the 2-D electron gas present at the AlGaN/GaN interface is employed as the bottom electrode as well as the transistor conducting channel. The carrier concentration of the channel is modulated when the device undergoes acoustic strain. A quality factor of 250 and acoustic transconductance of 25 μS is achieved at resonance frequency of 4.23 GHz, marking the highest frequency and highest transconductance reported to date for GaN-based RBTs. The frequency×Q of this device is among the best reported for GaN-based resonators.

Published in:

Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 4 )