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We provide for the first time the detailed study of the radiation performance of an optical leaky wave antenna (OLWA) integrated into a Fabry-Pérot resonator. We show that the radiation pattern can be expressed as the one generated by the interference of two leaky waves counter-propagating in the resonator leading to a design procedure for achieving optimized broadside radiation, i.e., normal to the waveguide axis. We thus report a realizable implementation of the OLWA made of semiconductor and dielectric regions. The theoretical modeling is supported by full-wave simulation results, which are found to be in good agreement. We aim to control the radiation intensity in the broadside direction via excess carrier generation in the semiconductor regions. We show that the presence of the resonator can provide an effective way of enhancing the radiation level modulation, which reaches values as high as 13.5 dB, paving the way for novel promising control capabilities that might allow the generation of very fast optical switches, as an example.