Monolithic high power millimeter wave quasi-optical frequency multiplier arrays using quantum barrier devices

Monolithic solid state device arrays are under development for application as millimeter and submillimeter sources. Current efforts are focused on frequency multiplication up to approximately equal to 100 GHz at the 1-50 W power level. However, the intrinsic capabilities of several of the devices should permit the extension of this work to frequencies of several THz. GaAs barrier-N-N+ (BNN) diode arrays have been successfully designed and fabricated. Frequency doubling to 66 GHz has been successfully achieved with an output power of 2.4-2.6 W and an efficiency in excess of 10%. In addition to the BNN arrays, a number of new device concepts have been developed in the course of this research which offer the promise of more efficient frequency multipliers with both higher cutoff frequency and higher power handling capability. These include the multi-quantum-barrier-varactor (MQBV), and the Schottky-quantum-barrier-varactor (SQBV).