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High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

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4 Author(s)
Voldman, S. ; Microelectronics Div., IBM, Essex Junction, VT, USA ; Gauthier, R. ; Reinhart, D. ; Morrisseau, K.

High-current phenomena and electrostatic discharge (ESD) in both aluminum and copper interconnects using transmission line pulse (TLP) testing are reported. Critical current density-to-failure, J/sub crit/, is evaluated as a function of pulse width for both wire and via structures. Experimental results demonstrate that copper-based interconnects have superior ESD robustness compared to aluminum-based interconnects.

Published in:

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Date of Conference:

March 31 1998-April 2 1998