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A new failure mechanism by corrosion of tungsten in a tungsten plug process

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3 Author(s)
Bothra, S. ; VLSI Technol. Inc., San Jose, CA, USA ; Sur, H. ; Liang, V.

The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 /spl mu/m generation, the metal overlap over the via also reduces. This results in vias which are not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures.

Published in:

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Date of Conference:

March 31 1998-April 2 1998