Cart (Loading....) | Create Account
Close category search window

Doped Layer Optimization for Silicon Heterojunctions by Injection-Level-Dependent Open-Circuit Voltage Measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Bivour, M. ; Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany ; Reusch, M. ; Schroer, S. ; Feldmann, F.
more authors

Besides passivation of the c-Si absorber, provided mainly by the undoped buffer layer, the net doping of the silicon thin films plays a major role in the performance of silicon-based heterojunction (SHJ) solar cells. However, junction engineering is complex as high net doping often interferes with the interface passivation and the optical properties of the silicon thin films. We show that injection-level-dependent open-circuit voltage (Suns- Voc) measurements are a simple and valuable method for the characterization and optimization of the doped amorphous silicon (a-Si:H) layers. It is shown by experiment and device simulations that at high illumination intensities the Suns- Voc characteristic exhibits a strong signature of defect recombination within the a-Si:H, which is determined by the a-Si:H doping and the interfacial transparent conducting oxide (TCO) properties. This fact is exploited for a qualitative interpretation of the interplay between a-Si:H and the interfacial TCO properties. As a clear correlation between the Suns- Voc characteristic and the maximum power point conditions of the devices exists, fill factor (FF) losses attributed to the doped a-Si:H and the interfacial TCO properties can 1) be easily predicted in the early stage of device optimization on simple test structures, or 2) these FF losses can be identified and distinguished from other FF losses in the final device.

Published in:

Photovoltaics, IEEE Journal of  (Volume:4 ,  Issue: 2 )

Date of Publication:

March 2014

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.