By Topic

Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cheng Huang Kuo ; Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan ; Yu An Chen ; Ji Pu Wu ; Li Chuan Chang

Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:50 ,  Issue: 3 )