By Topic

Chip to wafer copper direct bonding electrical characterization and thermal cycling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)

Copper direct bonding technology is considered to be one of the most promising approach for matching the miniaturization needs of future 3D integrated high performance circuits (3D-IC). In this study, we discuss the recent achievements in copper direct bonding technology with oxide/copper mixed surface and present the latest electrical and physical characterizations of chip to wafer bonding structures after annealing at 400°C and thermal cycling tests. In addition, electrical performance of chip to wafer bonding on 300mm wafers is also presented. Finally, thermo-mechanical finite element simulations showing the impact of the annealing conditions on the closure of the interface are shown.

Published in:

3D Systems Integration Conference (3DIC), 2013 IEEE International

Date of Conference:

2-4 Oct. 2013