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Copper direct bonding technology is considered to be one of the most promising approach for matching the miniaturization needs of future 3D integrated high performance circuits (3D-IC). In this study, we discuss the recent achievements in copper direct bonding technology with oxide/copper mixed surface and present the latest electrical and physical characterizations of chip to wafer bonding structures after annealing at 400°C and thermal cycling tests. In addition, electrical performance of chip to wafer bonding on 300mm wafers is also presented. Finally, thermo-mechanical finite element simulations showing the impact of the annealing conditions on the closure of the interface are shown.