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A 0.8 THz f_{\rm MAX} SiGe HBT Operating at 4.3 K

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7 Author(s)
Chakraborty, P.S. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Cardoso, A.S. ; Wier, B.R. ; Omprakash, A.P.
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We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak fMAX of 798 GHz (peak fT of 479 GHz) at 4.3 K was measured for a device with a BVCEO of 1.67 V. This scaled SiGe HBT also exhibits excellent thermal properties, as required from an electro-thermal reliability perspective. Taken together, these results strongly suggest that at the limits of scaling, robust, and manufacturable SiGe HBTs designed for room temperature operation are likely to achieve THz speeds.

Published in:

Electron Device Letters, IEEE  (Volume:35 ,  Issue: 2 )

Date of Publication:

Feb. 2014

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