Cart (Loading....) | Create Account
Close category search window
 

A 0.8 THz f_{\rm MAX} SiGe HBT Operating at 4.3 K

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chakraborty, P.S. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Cardoso, A.S. ; Wier, B.R. ; Omprakash, A.P.
more authors

We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak fMAX of 798 GHz (peak fT of 479 GHz) at 4.3 K was measured for a device with a BVCEO of 1.67 V. This scaled SiGe HBT also exhibits excellent thermal properties, as required from an electro-thermal reliability perspective. Taken together, these results strongly suggest that at the limits of scaling, robust, and manufacturable SiGe HBTs designed for room temperature operation are likely to achieve THz speeds.

Published in:

Electron Device Letters, IEEE  (Volume:35 ,  Issue: 2 )

Date of Publication:

Feb. 2014

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.