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Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

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4 Author(s)
Zheng, P. ; Res. Sch. of Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Rougieux, F.E. ; Macdonald, D. ; Cuevas, A.

Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to Klaassen's and Dorkel-Leturcq's mobility models in a range of temperatures.

Published in:

Photovoltaics, IEEE Journal of  (Volume:4 ,  Issue: 2 )

Date of Publication:

March 2014

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