By Topic

Effect on the Electronic, Magnetic and Thermoelectric Properties of {\hbox {Bi}}_{2}{\hbox {Te}}_{3} by the Cerium Substitution

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tran Van Quang ; Dept. of Phys., Ajou Univ., Suwon, South Korea ; Miyoung Kim

We investigated the effect of the Ce substitution in Bi2Te3 on its electronic, magnetic, and thermoelectric properties in first-principles using the precise full-potential linearized augmented plane-wave (FLAPW) method. Results revealed that CeBiTe3 is a magnetic semiconductor with a very narrow energy band gap in the spin-polarized phase within GGA+U. The calculation of thermoelectric coefficients, which is determined by utilizing the Boltzmann's equation in a constant relaxation-time approach using the FLAPW wave-functions, shows that the Ce substitution causes a reduction of the thermoelectric power, as a result of the change in Seebeck coefficient and electrical conductivity due to the strongly localized 4f bands and the reduced band gap. The maximum figure of merit ZT is found to be about 0.29 at 450 K, which is in good agreement with the experiment.

Published in:

Magnetics, IEEE Transactions on  (Volume:50 ,  Issue: 1 )