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Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate

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4 Author(s)
Ito, T. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Yoshimoto, N. ; Magari, K. ; Sugiura, H.

A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 μm. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 5 )