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For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LDs). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LDs with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 /spl mu/m/spl times/800 /spl mu/m gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T/sub 0/ of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).
Date of Publication: May 1998