Referenced Items are not available for this document.
For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LDs). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LDs with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 /spl mu/m/spl times/800 /spl mu/m gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T/sub 0/ of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).
Published in:
Photonics Technology Letters, IEEE
(Volume:10
,
Issue:
5
)
Date of Publication: May 1998
- Page(s):
- 651 - 653
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 5904487
- Digital Object Identifier :
- 10.1109/68.669229
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1998
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
