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A novel design procedure of broad-band multilayer antireflection (AR) coatings for optical and optoelectronic devices is proposed. The design algorithm is based on the optical admittance detuning, with the bandwidth of finite reflectivity as a new merit function. Coating structures consist of only two materials with nonquarter-wave thicknesses. Numerical mappings on the four-layer structure showed four optimizing regions where an optimized four-layer AR coating on 1.55 μm GaInAs-AlGaInAs MQW semiconductor laser facet was predicted to have a broad bandwidth of 106 mm for a reflectivity of less than 10-5. TiO2 and SiO2 were electron-beam (EB) evaporated to form the four-layer AR coating on glass and InP substrates with an ion-beam assist and a real time in situ optical thickness monitor and experimentally verify its broad-band performance
Published in:
Lightwave Technology, Journal of
(Volume:16
,
Issue:
5
)
Date of Publication: May 1998
- Page(s):
- 884 - 891
- ISSN :
- 0733-8724
- INSPEC Accession Number:
- 5914652
- Digital Object Identifier :
- 10.1109/50.669027
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1998
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
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