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Novel design procedure of broad-band multilayer antireflection coatings for optical and optoelectronic devices

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6 Author(s)
Jungkeun Lee ; Dept. of Electron. Eng., Tokyo Univ., Japan ; Tanaka, T. ; Sasaki, S. ; Uchiyama, Seiji
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A novel design procedure of broad-band multilayer antireflection (AR) coatings for optical and optoelectronic devices is proposed. The design algorithm is based on the optical admittance detuning, with the bandwidth of finite reflectivity as a new merit function. Coating structures consist of only two materials with nonquarter-wave thicknesses. Numerical mappings on the four-layer structure showed four optimizing regions where an optimized four-layer AR coating on 1.55 μm GaInAs-AlGaInAs MQW semiconductor laser facet was predicted to have a broad bandwidth of 106 mm for a reflectivity of less than 10-5. TiO2 and SiO2 were electron-beam (EB) evaporated to form the four-layer AR coating on glass and InP substrates with an ion-beam assist and a real time in situ optical thickness monitor and experimentally verify its broad-band performance

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Lightwave Technology, Journal of  (Volume:16 ,  Issue: 5 )