Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5–3 and the need for a careful circuit stabilization.