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Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

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6 Author(s)
Grassi, R. ; E. De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy ; Gnudi, A. ; Di Lecce, V. ; Gnani, E.
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Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.

Published in:

Electron Devices, IEEE Transactions on  (Volume:61 ,  Issue: 2 )

Date of Publication:

Feb. 2014

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