By Topic

RFIC's for mobile communication systems using SiGe bipolar technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Gotzfried, R. ; TEMIC Semicond. GmbH, Heilbronn, Germany ; Beisswanger, F. ; Gerlach, S. ; Schuppen, A.
more authors

We report on design aspects and the implementation of RF integrated circuits (RFIC's) using TEMIC's SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT's with 50-GHz fT and f max were obtained by a production process including polysilicon resistors, nitride capacitors, and spiral inductors showing Q values up to 10. RF noise figures down to 1 dB at 2 GHz with an associated gain of 14-dB and 1-kHz 1/f corner frequency were obtained. The differences between the device parameters of Si bipolar junction transistor (BJT) and SiGe HBT technology and their influence on IC design are discussed. Design and measurement results of RFIC's, including a low-noise amplifier (LNA) and a power amplifier (PA) for application in a 1.9-GHz digital enhanced cordless telecommunications (DECT) RF front-end and 900-MHz preamplifier for a global system for mobile communication (GSM) power module are presented

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 5 )