By Topic

Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Yunghong Wu ; Dept. of Electr. & Electron. Eng., Queen''s Univ., Belfast, UK ; Armstrong, B.M. ; Gamble, H.S. ; Zhirun Hu
more authors

A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n+ and contact n+ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si barrier was formed by metallurgical interaction between pure platinum film and silicon. The process technology developed for the Schottky-detector diode fabrication is precise, simple, and cheap, and is suitable for mass production. The typical measured cutoff frequency of a zero-biased fabricated Schottky diode is 118 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 5 )