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Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate

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8 Author(s)
Yunghong Wu ; Dept. of Electr. & Electron. Eng., Queen''s Univ., Belfast, UK ; Armstrong, B.M. ; Gamble, H.S. ; Zhirun Hu
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A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n+ and contact n+ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si barrier was formed by metallurgical interaction between pure platinum film and silicon. The process technology developed for the Schottky-detector diode fabrication is precise, simple, and cheap, and is suitable for mass production. The typical measured cutoff frequency of a zero-biased fabricated Schottky diode is 118 GHz

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 5 )

Date of Publication:

May 1998

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