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Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model

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4 Author(s)
Chan, Yi-Jen ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Chia-Hung Huang ; Chung-Chian Weng ; Boon-Khim Liew

Si MOSFET's with submicrometer gate length were fabricated and characterized by RF evaluation. Devices with a 0.25 μm gate length demonstrated a gm of 258 mS/mm, an fT of 28 GHz, and a minimum noise figure of 1.8 dB at 900 MHz. A nonlinear device model was constructed based on the measured results. Empirical equations are used to represent the nonlinear elements such as gm, C gs, Cgd, Cds, and Rout. These nonlinear elements, together with device parasitics, provide designers with a comprehensive model for using these devices for RF circuits

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 5 )