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Si and SiGe millimeter-wave integrated circuits

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1 Author(s)
P. Russer ; Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeter-wave sensors. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon- and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon- and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:46 ,  Issue: 5 )