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High-Q capacitors implemented in a CMOS process for low-power wireless applications

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4 Author(s)
Chih-Ming Hung ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Yo-Chuol Ho ; Wu, I.-C. ; O, K.

In a foundry 0.8-μm CMOS process, low-cost capacitors with a measured Q factor of around 50 at 3 GHz and high intrinsic capacitance/area (~200 nF/cm2) were demonstrated. When extrapolated to 900 MHz, the Q factor is greater than 100. The capacitors use a poly-to-n-well MOS structure which has been commonly dismissed for high-Q applications due to the high n-well sheet resistance (~1 kΩ/□). Utilizing the structure, a low-noise amplifier (LNA) with a resonant frequency of 960 MHz, power gain of 16.2 dB, 1-dB compression point (P1 dB) of -5 dBm, and noise figure of 3.5 dB was demonstrated. Using a rule of thumb, the third-order harmonic intercept point (PIP3) was estimated to be 5 dBm from the P1 dB data. Despite concerns for nonlinearity of the capacitors, these results suggest that this capacitor structure could be used in LNA's with a large dynamic range

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:46 ,  Issue: 5 )
RFIC Virtual Journal, IEEE