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Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

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7 Author(s)
Fabien, C.A.M. ; Georgia Inst. of Technol., Atlanta, GA, USA ; Moseley, M. ; Gunning, B. ; Doolittle, W.A.
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Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ~11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

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Photovoltaics, IEEE Journal of  (Volume:4 ,  Issue: 2 )