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Previously, the dynamic infrared lifetime mapping (ILM) approach was used for a spatially resolved determination of the reverse saturation current density J0 of local highly doped regions in silicon. However, possible restrictions of the method have not been considered yet. We show that 1) injection dependent lifetimes, 2) a nonlinearity between camera signal and excess charge-carrier density, as well as 3) an additional signal due to a modulated sample temperature may affect the lifetime measurement and thus the correct determination of J0. Moreover, we consider the impact of injection dependent lifetimes and the modulated sample temperature under high-level injection. We apply our approach to symmetrically phosphorous diffused and textured samples with sheet resistances between 23 and 150 Ω/sq. Using the adopted evaluation algorithm of the dynamic ILM technique, we obtain an agreement in J0 evaluated by dynamic ILM and photo-conductance decay measurements of 8%.