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Exchange coupling and GMR properties in ion beam sputtered hematite spin-valves

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6 Author(s)
M. Sano ; Data Storage Components Bus. Group, TDK Corp., Nagano, Japan ; S. Araki ; M. Ohta ; K. Noguchi
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We have succeeded in fabricating hematite (α-Fe2O 3) antiferromagnetic (AF) thin films by the ion beam sputtering method, which give unidirectional anisotropy to the adjacent ferromagnetic layer. Its exchange bias energy (Jex) is 0.03 erg/cm2, and blocking temperature (Tb) is 250°C. Spin-valve films with the hematite AF layer were also fabricated. They exhibit GMR property with unidirectional anisotropy of the pinned layer. Spin- valve films of which magnetic layers consist of only NiFe exhibit relatively low MR ratio and poor thermal stability. However, the spin-valve using Co as the pinned layer and the free layer at the Cu interface exhibits MR ratio of more than 6% and excellent thermal stability

Published in:

IEEE Transactions on Magnetics  (Volume:34 ,  Issue: 2 )