By Topic

On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface-Passivated Semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yasin Khatami ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA ; Hong Li ; Wei Liu ; Kaustav Banerjee

The superb properties of graphene such as high mobility, broad spectral range of optical transparency, high mechanical flexibility, and impermeability to moisture have made it a promising material for transparent conductor (TC) applications. To optimize the properties of graphene-based TCs, an in-depth understanding of the properties of graphene layers on different materials is crucial. In this paper, the electrostatics and charge screening of Bernal-stacked few-layer graphene (FLG) on surface-passivated semiconductors (SC) are investigated. A self-consistent method is developed, which calculates the equilibrium characteristics of the Schottky barrier at the interface and the charge distribution arising from the impurities on FLG and charge transfer from the SC to FLG. The developed model is applied to FLG/Si structures, and the charge distribution and charge screening effects are investigated. It is shown that with proper selection of doping concentration, the barrier height of the FLG/Si structure under study can be reduced by more than 400 mV, which is crucial in improving the contact resistance between FLG and SC. The self-consistent method and the analysis provide a pathway toward high-performance design of FLG-based TCs.

Published in:

IEEE Transactions on Nanotechnology  (Volume:13 ,  Issue: 1 )