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Thermoelectric properties of β-Zn4Sb3 doped with Sn

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5 Author(s)
Koyanagi, T. ; Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan ; Hino, K. ; Nagamoto, Y. ; Yoshitake, H.
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We have tried to dope β-Zn4Sb3 with Sn for the purpose of the p-type doping and the enhancement of phonon scattering, which further improve the thermoelectric properties of βZn4Sb3. Polycrystalline samples doped with Sn were prepared by the spark plasma sintering method. Although no other phase was observed except for β-Zn4Sb3 in Sn-doped samples up to 3%, their lattice constants were not at all changed from that of bulk β-Zn4Sb3, indicating that Sn was not unfortunately substituted for Sb. These results suggest that microcrystals of Sn is dispersed in grain boundary regions of β-Zn4Bb3. The Seebeck coefficient was almost unchanged, and the electrical conductivity was slightly decreased by doping β-Zn4Sb3 with Sn, indicating that Sn does not act as a dopant. On the other hand the thermal conductivity was lowered from 8.66mW/cmK of the non-doped sample to 6.88mW/cmK of the 3% Sn-doped sample at room temperature. This lowering of the thermal conductivity was considered to be due to the point defect phonon scattering induced by inclusions of Sn

Published in:

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Date of Conference:

26-29 Aug 1997