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Microstructure and thermoelectric properties of arc-melted silicon borides

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5 Author(s)
L. Chen ; Inst. of Mater. Res., Tohoku Univ., Sendai, Japan ; T. Goto ; Jianhui Li ; E. Aoyagi
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Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiBn (hexagonal, n=14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB4 phase formed at the Si-SiBn boundary. By annealing for more than 5.4 ks, SiB6 phase formed and SiB4 phase disappeared. SiBn content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient

Published in:

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Date of Conference:

26-29 Aug 1997