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Mismatch characterization of small metal fringe capacitors

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2 Author(s)
Tripathi, V. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Murmann, B.

Even though small metal fringe capacitors are important for the realization of low-energy A/D converters, present literature is lacking experimental data on their mismatch characteristics. This paper describes a test structure and measurements results pertaining to the characterization of single-layer, lateral-field, 0.45-fF and 1.2-fF unit metal capacitors in a 32-nm SOI CMOS process. The measurement-inferred average standard deviations for these capacitances are 1.2% and 0.8%, respectively, confirming area scaling according to Pelgrom's matching law.

Published in:

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Date of Conference:

22-25 Sept. 2013