Cart (Loading....) | Create Account
Close category search window

Linearization of CMOS Cascode Power Amplifiers Through Adaptive Bias Control

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sangsu Jin ; Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea ; Byungjoon Park ; Kyunghoon Moon ; Myeongju Kwon
more authors

Highly linear and efficient CMOS cascode power amplifiers (PAs) are developed for handset applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of the common-source (CS) and the common-gate (CG) stages. The memory effects that are generated by the bias circuits are reduced using second harmonic control circuits at the source of the CS and the gate of the CG stages. The proposed PA, including the integrated bias circuits, is fabricated using a 0.18-μm RF CMOS technology. The adaptive gate bias circuits improve the linearity and efficiency significantly. The measurement results show that the sideband asymmetry is less than 1.5 dB and the peak average power is improved by 1.2 dB within the linearity specification for a 16-QAM 7.5 dB PAPR LTE signal. The bias circuits improve the linearity of the PA within the specification without using digital pre-distortions. The CMOS PA delivers a power-added efficiency (PAE) of 41.0%, an error vector magnitude (EVM) of 4.6%, and an average output power of 27.8 dBm under an ACLRE-UTRA of -31.0 dBc for a 10-MHz bandwidth signal at 1.85-GHz carrier frequency.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 12 )

Date of Publication:

Dec. 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.