By Topic

The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lee, Sejoon ; Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715, South Korea ; Lee, Youngmin ; Song, Emil B. ; Hiramoto, Toshiro

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4827177 

We investigate the peculiar electrical characteristics of Si quantum-dot devices coupled with asymmetric source/drain tunnel barriers. When the thick and thin tunnel barriers connect the quantum-dot to the source and drain, respectively, an elongated Coulomb-blockade region is created and enables a precise, reliable, and systematic control of both Coulomb-blockade oscillation and negative-differential-conductance oscillation by means of bias voltages. The distinctive phenomenon is attributed to the renormalization of the electron charging energy requirements for the Coulomb blockade. In-depth analyses on the transport characteristics and transport mechanisms are discussed.

Published in:

Journal of Applied Physics  (Volume:114 ,  Issue: 16 )