Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4827177
We investigate the peculiar electrical characteristics of Si quantum-dot devices coupled with asymmetric source/drain tunnel barriers. When the thick and thin tunnel barriers connect the quantum-dot to the source and drain, respectively, an elongated Coulomb-blockade region is created and enables a precise, reliable, and systematic control of both Coulomb-blockade oscillation and negative-differential-conductance oscillation by means of bias voltages. The distinctive phenomenon is attributed to the renormalization of the electron charging energy requirements for the Coulomb blockade. In-depth analyses on the transport characteristics and transport mechanisms are discussed.