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The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers

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4 Author(s)
Lee, Sejoon ; Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715, South Korea ; Lee, Youngmin ; Song, Emil B. ; Hiramoto, Toshiro

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We investigate the peculiar electrical characteristics of Si quantum-dot devices coupled with asymmetric source/drain tunnel barriers. When the thick and thin tunnel barriers connect the quantum-dot to the source and drain, respectively, an elongated Coulomb-blockade region is created and enables a precise, reliable, and systematic control of both Coulomb-blockade oscillation and negative-differential-conductance oscillation by means of bias voltages. The distinctive phenomenon is attributed to the renormalization of the electron charging energy requirements for the Coulomb blockade. In-depth analyses on the transport characteristics and transport mechanisms are discussed.

Published in:

Journal of Applied Physics  (Volume:114 ,  Issue: 16 )