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Reliability challenges of FinFET and other multi-gate MOSFETs

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2 Author(s)
Mohseni, Javaneh ; Georgia Institute of Technology Atlanta, GA 30308 ; Meindl, James D.

In this paper by showing the results of an analytical model for the different variations of Multi-Gate MOSFETs including the FinFET., All-Around Gate MOSFET., Double-Gate MOSFET., we present a complete and detailed investigation of all the performance aspects of these novel device structures. By having the values of all the performance metrics of the transistors such as drain current., subthreshold swing., threshold voltage., and gate capacitance., we present detailed discussions on the several advantages of all the Multi-Gate structures including the FinFET.

Published in:

Reliability Science for Advanced Materials and Devices (RSAMD), 2013 IEEE Conference on

Date of Conference:

24-25 Feb. 2013