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New doping technology-plasma doping-for next generation CMOS process with ultra shallow junction-LSI yield and surface contamination issues

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2 Author(s)
M. Takase ; Central Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan ; B. Mizuno

Plasma doping method as a candidate to alternate conventional ion implantation has been proposed. LSI yield and surface contamination were confirmed for realizing mass production. This method has ultra low energy capability with very high throughput

Published in:

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Date of Conference:

6-8 Oct 1997