By Topic

Characterization of a Commercially Available Large Area, High Detection Efficiency Single-Photon Avalanche Diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Stipcevic, M. ; Dept. of Phys., Univ. of California, Santa Barbara, Santa Barbara, CA, USA ; Daqing Wang ; Ursin, R.

We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps full-width at half-maximum are the main distinguishing characteristics of this SPAD.

Published in:

Lightwave Technology, Journal of  (Volume:31 ,  Issue: 23 )