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Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

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4 Author(s)
Ming-Jer Chen ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Huan-Tsung Huang ; Chin-Shan Hou ; Kuo-Nan Yang

The drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT. Each of the three shows different dependencies on back-gate bias. As a result, the bulk BTBT, increasing exponentially with increasing the magnitude of back-gate reverse bias, promptly dominates the drain leakage. Additional experiment highlights the effect of the increased bulk dopant concentrations as in next-generation scaled MOSFET's on the bulk BTBT. This sets the bulk BTBT a significant constraint to the low-voltage, low-power, high-density CMOS integrated circuits employing the back-gate reverse bias. In this work, the measured drain leakage of interest is successfully reproduced by two-dimensional (2-D) device simulation.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 4 )