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Characteristics of high-voltage dual-metal-trench (DMT) SiC Schottky pinch-rectifiers are reported for the first time. At a reverse bias of 300 V, the reverse leakage current of the SiC DMT device is 75 times less than that of a planar device while the forward bias characteristics remain comparable to those of a planar device. In this work, 4H-SiC pinch-rectifiers have been fabricated using a small/large barrier height (Ti/Ni) DMT device structure. The DMT structure is specially designed to permit simple fabrication in SiC. The Ti Schottky contact metal serves as a self-aligned trench etch mask and only four basic fabrication steps are required.