Referenced Items are not available for this document.
Characteristics of high-voltage dual-metal-trench (DMT) SiC Schottky pinch-rectifiers are reported for the first time. At a reverse bias of 300 V, the reverse leakage current of the SiC DMT device is 75 times less than that of a planar device while the forward bias characteristics remain comparable to those of a planar device. In this work, 4H-SiC pinch-rectifiers have been fabricated using a small/large barrier height (Ti/Ni) DMT device structure. The DMT structure is specially designed to permit simple fabrication in SiC. The Ti Schottky contact metal serves as a self-aligned trench etch mask and only four basic fabrication steps are required.
Published in:
Electron Device Letters, IEEE
(Volume:19
,
Issue:
4
)
Date of Publication: April 1998
- Page(s):
- 97 - 99
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5880140
- Digital Object Identifier :
- 10.1109/55.663526
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- April 1998
- Sponsored by :
- IEEE Electron Devices Society
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