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A low-power monolithic GaAs FET bandpass filter based on negative resistance technique

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3 Author(s)
Cho, Y.-H. ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Song-cheol Hong ; Young-Se Kwon

This paper describes a monolithic GaAs FET active bandpass filter utilizing negative resistance elements. The negative resistance element was realized with a common-drain FET with series inductive feedback and the measured output impedance characteristics are given. The fabricated monolithic fourth-order filter showed an insertion loss of 0.7 dB at 4.85 GHz and a 3-dB bandwidth of 50 MHz with a DC power consumption of 7.5 mW

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Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 4 )