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Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures

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6 Author(s)
Schilling, J. ; Centre for Innovation Competence SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle, Germany ; Talalaev, V. ; Tonkikh, A. ; Fuhrmann, B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4825149 

The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of several hundred nanometers is detected adjacent to the etched facets due to the strong non-radiative surface recombination. Covering the surface with thin layers of aluminium oxide passivates part of the surface states leading to a reduction of the luminescence quenching zone.

Published in:

Applied Physics Letters  (Volume:103 ,  Issue: 16 )

Date of Publication:

Oct 2013

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